This equipment is suitable for high precision and high temperature prefixed crystal of SiC chips
Support the pressure sinter paste or the pressure sinter film process
♦Have two standard assembly heads and two heated bond heads
♦The heating head temperature can reach 300℃, and the Bond force capabilities up to 300 N ( (500N optional)
♦Heated substrate station up to 300 °C with integrated pre-heat station ,Temperature can be programmed,temperature range: ♦RT~300℃ (preheating and heating), accuracy ± 5℃,substrate area 175~305mm
♦Two standard assembly heads with interposer to transfer Die from cold to heated bond head, reduce the heating and cooling time , and improve the production efficiency
♦The equipment has an intelligent temperature monitoring system, which can automatically produce the pressure and temperature curve
♦Dis Size: 2x2mm~20x20mm
♦High UPH: 1K (Depend on product process (heating temperature, pressure time))
♦Nozzle cleaning function: for cleaning nozzle sinter paste
♦Optional nitrogen injectionmodule:Prevent product oxidation caused by heating and pressurization
♦With the ventilation system : Exhaust the gas produced by the sintering process from the equipment
(can be connected to the factory exhaust system)
♦Flexible configuration of a variety of chips / material feeding methods, with a high degree of upgrade and expansion ability
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