Pre-sinter Bonder
Model: CYG-GM4U-S
Equipment Overview

 This equipment is suitable for high precision and high temperature prefixed crystal of SiC chips

 Support the pressure sinter paste  or the pressure sinter film process


Equipment characteristics

♦Have two standard assembly heads and two heated bond heads

♦The heating head temperature can reach 300℃, and the Bond force capabilities up to 300 N ( (500N optional)

♦Heated substrate  station up to 300 °C with integrated pre-heat station ,Temperature can be programmed,temperature range: ♦RT~300℃ (preheating and heating), accuracy ± 5℃,substrate area 175~305mm

♦Two standard assembly heads with interposer to transfer Die from cold to heated bond head, reduce the heating and cooling time , and improve the production efficiency 

♦The equipment has an intelligent temperature monitoring system, which can automatically produce the pressure and temperature curve

♦Dis Size: 2x2mm~20x20mm

♦High UPH: 1K (Depend on product process (heating temperature, pressure time))

♦Nozzle cleaning function: for cleaning nozzle sinter paste

♦Optional nitrogen injectionmodule:Prevent product oxidation caused by heating and pressurization

♦With the ventilation system : Exhaust the gas produced by the sintering process from the equipment

(can be connected to the factory exhaust system)

♦Flexible configuration of a variety of chips / material feeding methods, with a high degree of upgrade and  expansion ability


Technical Parameter
project Specification Description